Light emitting device and method for manufacturing same

ABSTRACT

A light emitting device includes a light emitting element, a terminal substrate and a fixing member. The light emitting element is a semiconductor laminate having a first semiconductor layer, a light emitting layer, and a second semiconductor layer that are laminated in that order, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. The terminal substrate includes a pair of terminals connected to the first electrode and the second electrode, and an insulator layer that fixes the terminals. At least a part of the outer edges of the terminal substrate is disposed more to a center of the light emitting device than the outer edges of the semiconductor laminate. The fixing member fixes the light emitting element and the terminal substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to Japanese Patent Application No.2013-101219 filed on May 13, 2013. The entire disclosure of JapanesePatent Application No. 2013-101219 is hereby incorporated herein byreference.

BACKGROUND

1. Technical Field

The present disclosure relates to a light emitting device and a methodfor manufacturing the same.

2. Related Art

The output, brightness, and so forth of light emitting diodes have beenincreased in recent years by improving the crystal quality of thesedevices, etc. As a result, in addition to various uses in the field ofgeneral lighting, the field of automotive lighting and the like, therehave been proposals for making these devices smaller and higher inquality.

In view of this, light emitting devices with an integrated circuit boardhave been proposed as a surface mount type of light emitting device, andvarious methods have been proposed that allow such a light emittingdevice to be assembled simply (see JP2010-199565A, JP2010-177225A, etc.)

These conventional light emitting devices has been formed by a method inwhich a plurality of light emitting elements of a wafer unit areintegrally arranged, and in this state are mounted all at once on amounting board having a plurality of units corresponding to a singlelight emitting device, and then diced. Alternatively, a method isemployed in which chips are mounted all at once on a mounting boardhaving a plurality of units corresponding to a single light emittingdevice, and then diced.

There is a need for light emitting devices to be made even more compact,thinner, and brighter. In addition to enhancing these characteristics,there is also a need for a light emitting device that is easier tohandle and less expensive.

SUMMARY

In one embodiment, the present disclosure relates to a light emittingdevice having:

a light emitting element including:

-   -   a semiconductor laminate in which a first semiconductor layer, a        light emitting layer, and a second semiconductor layer are        laminated in that order;    -   a first electrode connected to the first semiconductor layer and    -   a second electrode connected to the second semiconductor layer;

a terminal substrate including:

-   -   a pair of terminals connected to the first electrode and the        second electrode, and    -   an insulator layer that fixes the terminals,    -   at least a part of the outer edges of the terminal substrate        being disposed more to an inside than the outer edges of the        semiconductor laminate; and

a fixing member fixing the light emitting element and the terminalsubstrate.

In other embodiment, the present disclosure relates to a method ofmanufacturing a light emitting device includes:

mounting a terminal substrate on a light emitting element including thesemiconductor laminate so that at least a part of the outer edge of theterminal substrate is disposed more to the inside than the outer edge ofthe light emitting element in plan view.

In still other embodiment, the present disclosure relates to a method ofmanufacturing a light emitting device includes:

arranging on a support a plurality of semiconductor laminates in which afirst semiconductor layer, a light emitting layer and a secondsemiconductor layer are laminated in that order, and which have a firstelectrode connected to the first semiconductor layer and a secondelectrode connected to the second semiconductor layer on one side; and

mounting a terminal substrate on each of the semiconductor laminatesarranged on the support so that the outer edge of the terminal substrateis disposed more to the inside than the outer edge of the semiconductorlaminates in plan view.

In further still other embodiment, the present disclosure relates to alight emitting device including:

a semiconductor laminate including a first semiconductor layer, a lightemitting layer, and a second semiconductor layer are laminated in thatorder,

-   -   the semiconductor laminate having a plurality of outer edges,    -   a first electrode connected to the first semiconductor layer,        and    -   a second electrode connected to the second semiconductor layer;

a terminal substrate including:

-   -   a pair of terminals including a first terminal and a second        terminal,    -   the first terminal connected to the first electrode,    -   the second terminal connected to the second electrode,    -   an insulator layer that fixes the terminals, and    -   a plurality of outer edges;

a fixing member fixing the light emitting element and the terminalsubstrate; and

a portion of the outer edges of the terminal substrate are disposedcloser to a center of the light emitting device than the outer edges ofthe semiconductor laminate when viewed in a plan view.

The present disclosure relates to a method of manufacturing a lightemitting device including:

mounting a terminal substrate on a light emitting element,

the terminal substrate having a plurality of outer edges,

the light emitting element including a semiconductor laminate and anouter edge;

the mounting the terminal substrate on the light emitting element suchthat a portion of the outer edges of the terminal substrate is disposedcloser to a center of the light emitting device than the outer edge ofthe light emitting element when viewed in a plan view.

The present disclosure relates to a method of manufacturing a lightemitting device including:

preparing light emitting elements including semiconductor layer in whicha first semiconductor layer, a light emitting layer and a secondsemiconductor layer are laminated in that order, a first electrodeconnected to the first semiconductor layer, and a second electrodeconnected to the second semiconductor layer on one side;

arranging a plurality of light emitting elements on a support;

mounting a terminal substrate on each of the light emitting elementssuch that an outer edge of the terminal substrate is disposed closer toa center of the semiconductor laminate than an outer edge of the lightemitting element when viewed in a plan view.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A consists of a simplified cross section and FIG. 1B consists of abottom view of an embodiment of the light emitting device of the presentdisclosure;

FIGS. 2A to 2F consist of simplified cross sectional step diagrams ofthe manufacturing process for the light emitting device of the presentinvention;

FIG. 3 is a bottom view of another embodiment of the light emittingdevice of the present invention;

FIG. 4A consists of a simplified cross section and FIG. 4B consists of abottom view of yet another embodiment of the light emitting device ofthe present invention;

FIG. 5A consists of a simplified cross section and FIG. 5B consists of abottom view of yet another embodiment of the light emitting device ofthe present invention;

FIG. 6A consists of a simplified oblique view, FIG. 6B consists of aB-B′ cross section,

FIG. 6C consists of a C-C′ cross section, FIG. 6D consists of a lateralside view in the direction of the arrow D, and FIG. 6E consists of avertical side view in the direction of the arrow E of yet anotherembodiment of the light emitting device of the present invention;

FIG. 7 is a simplified oblique view of yet another embodiment of thelight emitting device of the present invention; and

FIGS. 8A and 8B consist of simplified cross sectional step diagrams ofanother manufacturing process for the light emitting device of thepresent invention.

FIG. 9 consists of a simplified cross section of an embodiment of thelight emitting device of the present disclosure.

DETAILED DESCRIPTION OF EMBODIMENTS

The present invention was conceived in light of the above problem, andit is an object thereof to provide a light emitting device which is easyto handle, and which can be provided less expensively by improving massproduction, in addition to reducing the size and thickness, increasingthe brightness, and enhancing other such characteristics, as well as amethod for manufacturing this device.

Terms indicating a specific direction or position are used as requiredin the following description (for example, “above”, “below”, “right”,“left”, and other terms including those terms). However, these terms arefor the purpose of facilitating comprehension of the invention byreference to the figures, and do not limit the technical scope of theinvention as a result of the meaning of these terms. Further, in thedescription below, the same designations or the same reference numeralsmay, in principle, denote the same or like members and duplicativedescriptions will be appropriately omitted. To facilitate anunderstanding of the invention, its embodiments will be describedseparately, but these embodiments are not independent from one another,and where they can be shared in common, descriptions of otherembodiments are applicable.

Selected embodiments will now be explained with reference to thedrawings. It will be apparent to those skilled in the art from thisdisclosure that the following descriptions of the embodiments areprovided for illustration only and not for the purpose of limiting theinvention as defined by the appended claims and their equivalents.

A light emitting device according to the present embodiment includes alight emitting element, i.e., a semiconductor laminate and a terminalsubstrate. The light emitting device may also include a fixing member.One or more semiconductor laminates are included in a single lightemitting device here. This light emitting device can be either what isknown as a top view type or a side view type.

Light Emitting Element

A light emitting element generally includes a semiconductor laminate,the first electrode and the second electrode.

Semiconductor Laminate

The semiconductor laminate of the present embodiment is produced bylaminating a first semiconductor layer (such as an n-type semiconductorlayer), a light emitting layer, and a second semiconductor layer (suchas a p-type semiconductor layer), in that order. On one side (alsoreferred to as the second semiconductor layer side or the lower faceside, for example) of the semiconductor laminate, a first electrode thatis connected to the first semiconductor layer, and a second electrodethat is connected to the second semiconductor layer are disposed. Alight extraction face, where light is emitted from the semiconductorlaminate, is on the other side of the semiconductor laminate, that is,on the opposite side from the one side mentioned above. Thesemiconductor laminate is laminated over a substrate used for growing asemiconductor layer, and may retain this substrate, or the substrate maybe removed.

There are no particular restrictions on the kind and material of thefirst semiconductor layer, the light emitting layer and the secondsemiconductor layer, for example, examples thereof include varioussemiconductor such as a III-V compound semiconductor, a II-V compoundsemiconductor. More specifically, examples thereof include a galliumnitride-based semiconductor material such as In_(X)Al_(Y)Ga_(1-X-Y)N(0≦X, 0≦Y, X+Y≦1), InN AlN, GaN, InGaN, AlGaN, InGaAlN, and the like canbe used. A known a thickness or a laminated structure of each layer inthe art can be used.

The substrate may be one which can be grown semiconductor layers.Examples of the material for the substrate include an insulatingsubstrate such as sapphire (Al₂O₃) and spinel (MgAl₂O₄) and the like,and a semiconductor substrate such as the nitride semiconductordescribed above. When a transparent substrate such as sapphire is usedfor the substrate used for growing a semiconductor layer, the substratemay be employed in the light emitting device without removing from thesemiconductor laminate.

Among these, the substrate which has a main surface of any one of Cplane, A plane, R plane, M plane is preferable. The substrate which hasA plane or C plane as an orientation flat plane is more preferable. Inparticular, a sapphire substrate which has C plane (0001) as the mainsurface and A plane (11-20) of the orientation flat plane is still morepreferable.

The substrate may have convex surfaces and concave surfaces on itssurface. The surface of the substrate may have an off angle of about 0to 10° with respect to a predetermined crystalline surface such as Cplane or A plane. The substrate may have at least one semiconductorlayer such as an intermediate layer, buffering layer, underlying layer,and the like, or at least one insulating layer between the substrate andthe first semiconductor layer.

If the substrate used for growing a semiconductor layer is removed fromthe semiconductor laminate, the resulting light emitting device will bethinner and more compact. Also, removing any layers that do notcontribute directly to light emission prevents the light emitted fromthe light emitting layer from being absorbed by these layers, soemission efficiency can be increased. As a result, brighter light can beemitted.

There are no particular restrictions on the shape of the semiconductorlaminate in plan view, but a shape that is quadrangle or a similar shapeis preferable. The upper limit to the size of the semiconductor laminatecan be suitably adjusted according to the size of the light emittingdevice. More specifically, an example of the length of the semiconductorlaminate along one side is from a few hundred microns to about 10 mm.

When the semiconductor laminate retains the substrate used for growingthe semiconductor layer, the shapes of the semiconductor laminate andthe substrate in plan view may be the same, or may be different to eachother, that is, part of the surface of the substrate may be exposed fromthe semiconductor laminate for easy separation of each the semiconductorlaminate.

First Electrode and Second Electrode

The first electrode and second electrode are formed on one side of thesemiconductor laminate (if there is a substrate, the opposite side fromthe side on which the substrate is located).

The first electrode and second electrode can be formed by a single-layerfilm or a laminate film of Al, Ag, Au, Pt, Pd, Rh, Ni, W, Mo, Cr, Ti oranother such metal or an alloy of such metals. More specifically, it canbe formed by a laminate film in which AlSiCu/Ti/Pt/Au, Ti/Rh/Au,W/Pt/Au, Rh/Pt/Au, Ni/Pt/Au or Ti/Rh are laminated in that orderstarting from the semiconductor layer side. The film thickness may bethe thickness of any film used in this field. Also, a conductivematerial other than a metal, such as ITO, may be used.

The first electrode and second electrode are preferably such that amaterial layer whose reflectivity to light emitted from the lightemitting layer is higher than that of the other material of theelectrodes is disposed as part of these electrodes on the side closer tothe first semiconductor layer and the second semiconductor layer.

An example of a material with high reflectivity is a layer of silver, asilver alloy, or containing aluminum. The silver alloy may be anymaterial that is known in this field. There are no particularrestrictions on the thickness of this material layer, but an example isa thickness that allows the light emitted from the light emittingelement to be effectively reflected, such as about 20 nm to 1 p.m. Thegreater is the contact surface area of this material layer with thefirst semiconductor layer or the second semiconductor layer, the better.

When silver or a silver alloy is used, the surface thereof (preferablythe top face or side faces) is preferably covered with a cover layer inorder to prevent the migration of the silver.

This cover layer is normally one formed by a metal or alloy that is usedas a single-layer film or a laminate film including a conductivematerial such Al, Cu, Ni or another such metal. Among these, AlCu isparticularly favorable. The thickness of the cover layer may be from afew hundred nanometers to a few microns, in order to effectively preventthe migration of silver.

As long as the first electrode and second electrode are connected to thefirst semiconductor layer and second semiconductor layer, respectively,the entire surface of the electrodes need not be touching thesemiconductor layer, and part of the first electrode may not be disposedon the first semiconductor layer and/or part of the second electrode maynot be disposed on the second semiconductor layer. That is, the firstelectrode may be disposed on the second semiconductor layer, and thesecond electrode may be disposed on the first semiconductor layer, viaan insulating film or the like.

There are no particular restrictions on the insulating film, which maybe any single-layer film or laminated film that is used in this field.

The first electrode and second electrode can be set to the desired sizeand position, regardless of the surface area of the first semiconductorlayer and/or the second semiconductor layer, by using theabove-mentioned insulating film or the like. Accordingly, mounting aterminal substrate (discussed below) to a semiconductor laminate can beeasy even when the terminal substrate has a surface area that is smallerthan the surface area of the semiconductor laminate.

The shape of the first electrode and second electrode can be setaccording to the shape of the semiconductor laminate, the shape of theterminals on the terminal substrate, and so forth. For instance, thefirst electrode and second electrode preferably have shapes thatcorrespond to the terminals (hereinafter also referred to as “junctionterminals”; an example is a quadrangle shape or a shape close toquadrangle) of the terminal substrate joined to the first electrode andsecond electrode (discussed below). The first electrode and secondelectrode and the junction terminals preferably have a shape that isquadrangle or close to quadrangle. Consequently, a self-alignment effectallows for easy positioning and joining of the semiconductor laminateand the terminal substrate. In this case, it is preferable if the planarshapes of the first electrode and second electrode are substantially thesame at least at the outermost surface of the semiconductor laminateconnected to the terminal substrate (discussed below). It is alsopreferable if the first electrode and second electrode are disposed soas to face each other, with the center portion of the semiconductorlaminate in between in plan view.

The top faces of the first electrode and second electrode (the faces onthe opposite side from the semiconductor layer) may have a step, but arepreferably substantially flat. The term “flat” here means that theheight from the face of the semiconductor laminate that is on theopposite side from the side that touches the light emitting layer of thefirst semiconductor layer to the surface of the first electrode (theface of the first electrode on the opposite side form the semiconductorlaminate), and the height from the face of the semiconductor laminatethat is on the opposite side from the side that touches the lightemitting layer of the first semiconductor layer to the surface of thesecond electrode are substantially the same. The phrase “substantiallythe same” here encompasses fluctuation of about ±10% in the height ofthe semiconductor laminate.

The terminal substrate (discussed below) will be easier to mounthorizontally if the top faces of the first electrode and secondelectrode are substantially flat, that is, substantially in the sameplane. In order to form the first electrode and second electrode in thisway, for example, a metal film is provided by plating or the like overthe electrodes, after which this is polished or cut so that the surfaceslie in substantially the same plane.

The first electrode and second electrode may have protrusion portions ontheir surfaces, respectively. The protrusion portion is preferablydisposed at a region connected to a terminal of a terminal substrate.This allow to be easily filled a space between the light emittingelement and the terminal substrate with a fixing member when the fixingmember is formed in the space between the light emitting element and theterminal substrate. Thus, the transmission of the light emitted from thelight emitting element to a side of the terminal substrate can bereduced. Further, the reliability of the light emitting device isenhanced by disposing these protrusion portions and strongly-supportingthe light emitting element to the terminal substrate.

The shape of the upper surface of the protrusion portion formed on thefirst electrode or the second electrode of the light emitting element ispreferably the same or substantially the same as the shape in the planview of a portion to which the light emitting element is connected. Thisenables to be easily mounted the light emitting element on the terminalsubstrate at the proper site by a self-alignment effect.

The protrusion portion has any height from the upper surface of thefirst electrode or the second electrode in which the protrusion portionis not disposed, and the height of the protrusion portion is preferablyset to a few micro meters to 100 micro meters.

A DBR (distributed Bragg reflector) may be disposed between the firstelectrode and second electrode and their respective first semiconductorlayer and second semiconductor layer, to the extent that this does notimpair electrical connection of these.

A DBR is a multilayer structure in which a low refractive index layerand a high refractive index layer are laminated over an under layercomposed of an oxide film or the like, as needed, and selectivelyreflects light of a specific wavelength. More specifically, a specificwavelength can be reflected very efficiently by alternately laminatingfilms of different refractive indexes at a quarter-wave thickness. TheDBR can be formed of layers including at least one oxide film or nitridefilm selected from Si, Ti, Zr, Nb, Ta, Al or the like.

For example, the low refractive index layer can be SiO₂, and the highrefractive index layer can be Nb₂O₅, TiO₂, ZrO₂, Ta₂O₅, or the like.More specifically, (Nb₂O₅/SiO₂)_(n) (where n is 2 to 5) may be laminatedin order starting from the under layer side. The total thickness of theDBR is preferably about 0.2 to 1 μm.

This DBR may be used as the above-mentioned insulating film. Thisimproves the light extraction efficiency of the light emitting device.

When a growth substrate is removed by laser irradiation (discussedbelow), a material whose light absorbency is no more than 30% of thewavelength of the laser being used is preferably used as the material ofthe DBR. This reduces degradation of the DBR and allows the lightextraction efficiency to be kept high. For example, when a KrF excimerlaser with a wavelength of 248 nm is used, it is preferable to use ZrO₂rather than Nb₂O₅, TiO₂, or the like.

Terminal Substrate

The terminal substrate includes a pair of terminals that are connectedrespectively to the first electrode and second electrode of theabove-mentioned semiconductor laminate (i.e., light emitting element)and that are also connected to the outside of the light emitting device,and an insulator layer that fixes these terminals. However, if aplurality of semiconductor laminates are included in a single lightemitting device, the terminal substrate may further include one or moresets of wiring capable of functioning as connection wiring thatelectrically connects the plurality of semiconductor laminates. Inaddition to electrically connected terminals or wiring, there may alsobe heat dissipation-use terminals, a heat sink, or the like.

In this Specification, the face of the terminal substrate on the sidewhere the semiconductor laminate is mounted is called the elementjunction face or a first face, the face on the opposite side from theelement junction face is called the rear face or a second face, and theface or faces in between the element junction face and the rear face, orthe face that links these, is called a side face.

Insulator Layer

The insulator layer may be made from any material so long as it isinsulating. Examples include ceramics, resin, dielectrics, pulp, glass,composites of these materials, and composites of these materials and aconductor material (such as a metal or carbon). A ceramic isparticularly favorable. When a ceramic is used for the insulator layer,it can be procured at lower cost by applying technology formanufacturing small chip resistors. The ceramic preferably makes use ofaluminum nitride or another such material with high heat dissipationproperties. Further, a prepreg substrate formed of a glass epoxy resin,a grass silicone resin or a glass modified silicone resin, which has arelatively low linear coefficient of expansion, is preferable. Forexample, a glass epoxy substrate, having a low linear coefficient ofexpansion, which is adjusted to 1 to 15 ppm of linear coefficient ofexpansion by highly filling with glass fiber cloth or filler used in thefield of BGA mounting for the semiconductor device is preferably used.Such insulator layer on which conductive wiring patterns is formed ispreferably used as the terminal substrate. If the glass fiber cloth orfiller having a high heat dissipation is used for the material of theprepreg substrate, heat dissipation of the light emitting device can beenhanced.

Also, if a built-in component is built into the insulator layer, theinsulator layer can be served as a protection element and the like.

Terminals

At least on an element junction face of the terminal substrate, theterminals have junction terminals that are connected to the firstelectrode and second electrode of the light emitting element, andexternal connectors that is provided to other face of the terminalsubstrate and is connected to the outside of the light emitting device.

There are no particular restrictions on the position and so forth of theterminals inside the terminal substrate, but as an example, the junctionterminals are disposed at positions opposite the first electrode andsecond electrode, respectively, of the light emitting element, and mayextend from there so as to cover the side faces of the terminalsubstrate, or they may extend from the element junction face of theterminal substrate so as to cover the side faces and the faces on theopposite side of the element junction face (rear face) (see theterminals 15 and 16 in FIG. 1A), or they may extend so as to cover thethree side faces that are continuous with the element junction face ofthe terminal substrate (see 55 a and 56 a in FIG. 7). Also, theterminals may extend from the element junction face of the terminalsubstrate to the face where the external connectors are provided viaso-called via holes, and not via the side faces. The external connectorsare connected to the outside of the light emitting device, so they areexposed from a fixing member, etc. The external connectors may be oneither the rear face or a side face of the terminal substrate.

There are no particular restrictions on the material of the terminals,so long as it has good conductivity and affords good mounting, but amaterial with good wettability and bondability with the solder on themounting side or the joining member is preferable. Examples of thematerial include a laminating structure such as W/Ni/Au, W/Ni/Pd/Au,W/NiCo/Pd/Au and the like when the insulator layer is formed fromceramics and the like, and a laminating structure such as Cu/Ni/Au,Cu/Ni/Au, Cu/Ni/Pd/Au, Cu/NiCu/Ni/Au, Cu/Ni/Pd/Cu/Ni/Pd/Au and the likewhen the insulator layer is formed from glass eposy resin and the like.The above-mentioned conductive material used in the first electrode andsecond electrode also can be used.

The wiring that can function as connection wiring may be on the elementjunction face of the terminal substrate. The number of wires and theshape, position, and so forth of this wiring can be suitably setaccording to the number of semiconductor laminates to be mounted on asingle terminal substrate, the layout thereof, the connection mode(parallel or serial), and so forth.

A method for producing the terminals and wiring can be selectedaccording to the material for the insulator layer, size of the lightemitting device and the like. Plating, deposition, printing and the likeare suitably used. Further, the insulator of the resin and metalterminals embedded and fixed in the insulator are formed as the terminalsubstrate by, for example, bending a metal plate having a high heatdissipation such as Mg to the intended shape of terminal or wiring,forming the insulating material such as the resin including inorganicfiller around the metal plate, and then shaping through cutting orsevering.

The terminals or wires are preferably substantially flat on theirelement junction face side. Also, the terminals or wires are preferablysubstantially flat at the element junction face of the terminalsubstrate. Furthermore, the terminals or wires are preferably horizontalat the element junction face of the terminal substrate so that when theabove-mentioned semiconductor laminate and the terminal substrate arejoined, the face of the semiconductor laminate on the side where thefirst electrode and second electrode are not formed (that is, the lightextraction face) can be disposed horizontally. This simplifies theprocess of exposing the rear face side of the terminal substrate byremoving the fixing member (discussed below).

The terminals or wires may have protrusion portions on their surfaces,respectively. The protrusion portion is preferably disposed at a regionconnected to the first electrode and the second electrode of the lightemitting element. This allow to be easily filled a space between thelight emitting element and the terminal substrate with a fixing memberwhen the fixing member is formed in the space between the light emittingelement and the terminal substrate. Thus, the transmission of the lightemitted from the light emitting element to a side of the terminalsubstrate can be reduced. Further, the reliability of the light emittingdevice is enhanced by disposing these protrusion portions andstrongly-supporting the light emitting element to the terminalsubstrate.

The shape of the upper surface of the protrusion portion is preferablythe same or substantially the same as the shape in the plan view of thefirst electrode or the second electrode of the light emitting element tobe connected. This enables to be easily mounted the light emittingelement on the terminal substrate at the proper site by a self-alignmenteffect.

The protrusion portion can be formed by disposing a bump on a flatterminals or wires, disposing the insulator having a different thicknessunder which the terminals or wires are formed, disposing the terminalsor wires having a different thickness on a flat insulator, or bycombination thereof.

The protrusion portion has any height from the upper surface of theterminals or wires in which the protrusion portion is not disposed, andthe height of the protrusion portion is preferably set to a few micrometers to 100 micro meters.

There are no particular restrictions on the planar shape of the terminalsubstrate, which can be suitably set according to the shape of thesemiconductor laminate or the light emitting device. Examples of theplanar shape include circular, quadrangle and other such polyhedralshapes, and shapes close to these. Nor are there any particularrestrictions on the size, but the surface area is preferablysubstantially equal to, or less than, or greater than that of thesemiconductor laminate. In particular, when a single light emittingdevice includes a single semiconductor laminate, the surface area of theterminal substrate is preferably substantially equal to or less thanthat of the semiconductor laminate. When a single light emitting deviceincludes two or more semiconductor laminates, the terminal substratepreferably has a surface area that is substantially equal to or lessthan the combined surface area of the two or more semiconductorlaminates.

The terminal substrate is preferably disposed so that its outer edgesare more to the inside than a portion of the outer edges of thesemiconductor laminate in plan view. In other words, a portion of theouter edges of the terminal substrate are disposed closer to a center ofthe light emitting device than the outer edges of the semiconductorlaminate when viewed in a plan view. The “outer edge” here may be theentire edge, or just a part of it.

For example, it is preferable if the entire outer edge of the terminalsubstrate is disposed more to the inside than the outer edge of thesemiconductor laminate. This affords a more compact light emittingdevice.

Also, if the terminal substrate and the semiconductor laminate arequadrangle or close to being quadrangle in plan view, the outer edge ofthe terminal substrate may be disposed at the same position as the outeredge of the semiconductor laminate along at least one side, and theouter edge of the terminal substrate may be disposed more to the insidethan the outer edge of the semiconductor laminate along the remainingsides.

Thus, light will be less likely to shine on the terminal substrate ifthe surface area of the terminal substrate is made smaller than thesurface area of the semiconductor laminate, or if the outer edge of theterminal substrate is disposed more to the inside than the outer edge ofthe semiconductor laminate. This reduces the absorption of light by theterminal substrate, and affords a light emitting device with higherlight extraction efficiency.

When the light emitting device is a side view type, it is preferablyprovided so as to expose the terminals at the bottom face of theterminal substrate that will be the mounting face. Also, the bottom faceof the terminal substrate (that is the face on the opposite side fromthe face opposite to the semiconductor laminate, the rear face, or thesecond face), and one or two faces of the terminal substrate adjacent tothe bottom face are preferably exposed. Furthermore, the terminals maybe exposed at the face on the opposite side from the mounting face ofthe light emitting device.

There are no particular restrictions on the thickness of the terminalsubstrate, but the thickness preferably is sufficient to preventbreaking, chipping, etc., during handling of the semiconductor laminate,or to allow the semiconductor laminate to be reinforced in the lightemitting device. An example is a range of about 50 to 300 μM.

The terminal substrate may itself constitute a capacitor, a varistor, aZener diode, a bridge diode, or another such protective element, or itmay partially include a structure that provides the functions of theseelements. If a terminal substrate that has these element functions isused, the light emitting device will be able to function without anyspecial parts being mounted, so a high-performance light emitting devicewith enhanced electrostatic withstand voltage can be made more compact.

The junction terminals of the terminal substrate are usually joined byjunction members to the first electrode and second electrode of thesemiconductor laminate. These junction members can be made from anymaterial known in this field. Examples of the junction member include,for example, Au—Sn, Sn—Cu and other eutectic alloys (for example,solder), bump, anisotropic conductive material, and the like. If theeutectic alloy is used, a self-alignment effect will allow the terminalsubstrate to be easily mounted at the proper site, which improves massproduction and allows a more compact light emitting device to bemanufactured.

Fixing Member

The light emitting device of the present embodiment may further includea fixing member. A fixing member is a member having the function ofcovering or fixing the terminal substrate and/or the semiconductorlaminate constituting the above-mentioned light emitting device. Thereare no particular restrictions on the material of the fixing member solong as it serves such function, examples thereof include ceramics,resin, dielectrics, pulp, glass or the its complex material. Amongthese, a resin is preferable from the standpoint of being able to easilyform the desired shape.

Examples of the resin include a thermosetting resin and a thermoplasticresin. Specific Examples of such a resin include an epoxy resincomposition; a silicone resin composition; a modified epoxy resincomposition such as a silicone modified epoxy resin; a modified siliconeresin composition such as an epoxy modified silicone resin; a polyimideresin composition, a modified polyimide resin composition,polyphthalamide (PPA), a polycarbonate resin; a polyphenylene sulfide(PPS); a liquid crystal polymer (LCP); an ABS resin (anacrylonitrile-butadiene-styrene resin); a phenolic resin; an acrylicresin; and a PBT resin (polybutylene terephthalate resin).

The resin may contain a light reflecting material so that itsreflectivity of light from the light emitting element will be at least60%, and preferably at least, 70%, 80%, or 90%. Examples of the lightreflecting material include titanium dioxide, silicon dioxide, zirconiumdioxide, potassium titanate, alumina, aluminum nitride, boron nitride,mullite, niobium oxide, various rare earth oxides (e.g., yttrium oxide,gadolinium oxide, etc.). This allows the light from the light emittingelement to be reflected efficiently. In particular, when a materialwhose optical reflectivity is higher than that of the terminal substrateis used (for example, when aluminum nitride is used for the terminalsubstrate, a silicone resin containing titanium oxide is used as afixing member), good handling properties will be maintained while thesize of the terminal substrate can be reduced, and the light extractionefficiency of the light emitting device can be enhanced.

The resin may contain a light scattering material such as bariumsulfate, titanium dioxide, aluminum oxide, and silicon oxide, colorantssuch as carbon black, and the like. The resin may also contain a fibrousfiller such as glass fibers, wollastonite, an inorganic filler such ascarbon, silicon oxide or the like. The resin may contain a materialhaving a high heat dissipation such as aluminum nitride and the like.For example, when titanium dioxide is used, it is preferably to contain20 to 40 weight % with respect to the total weight of the resin member.

If such a component is contained, and the inorganic filler content isfurther increased, or a resin with high strength is used, the strengthof the fixing member can be increased in processes such as removing orpeeling off a substrate, support, etc., and this ensures good strengthin the light emitting device as well. Also, if a material with good heatdissipation properties is contained, heat dissipation can be enhancedwhile maintaining the small size of the light emitting device.

The fixing member is preferably (1) disposed so as to cover the sidefaces of the terminal substrate, (2) disposed so as to cover the sidefaces of the semiconductor laminate, and/or (3) disposed so as to fillin the space between the semiconductor laminate and the terminalsubstrate. It is especially preferable for them to be disposed so as tosatisfy all of (1) to (3) above. When the semiconductor laminate retainsthe substrate used for growing the semiconductor layer, the fixingmember is preferably disposed so as to cover the side faces of thesubstrate. When part of the surface of the substrate is exposed from thesemiconductor laminate, the fixing member is preferably disposed so asto cover the side faces of the substrate. Thus disposing the fixingmember ensures that the light emitting device will have good strength,and this makes the device easier to handle. Also, as discussed above,the semiconductor laminate will be strong enough to withstand the stressexerted on it when the substrate used for growing a semiconductor layeris removed, and a compact light emitting device can be manufactured at ahigh yield. In other words, a compact light emitting device can bemass-produced better. As a result, light emitting devices in which highquality is ensured individually can be obtained.

The fixing member preferably exposes the second face of the terminalsubstrate. This improves heat dissipation.

Also, when the fixing member is disposed so as to satisfy (1) to (3)above, it is preferable to use a fixing member with high reflectivity.This allows a higher light extraction to the top face of thesemiconductor laminate to be effectively achieved.

Here, the width of the fixing member that covers the side faces of theterminal substrate and/or the side faces of the semiconductor laminate(the height from the side faces of the terminal substrate or thesemiconductor laminate) can be suitably set according to the planarshape of the terminal substrate and/or the semiconductor laminate, butan example is about 20 to 200 μm. A thickness such as this will allowthe light emitted from the above-mentioned light emitting element to bereflected effectively, and allow adequate strength to be imparted to thesemiconductor laminate.

Wavelength Conversion Member

A wavelength conversion member is preferably provided to the lightextraction face of the light emitting device. For example, the lightextraction face of the semiconductor laminate is preferably covered bythe wavelength conversion member. If the side faces of the semiconductorlayer constituting the semiconductor laminate of the light emittingdevice are covered by and in contact with the fixing member, it is morepreferable if the fixing member is also covered by the wavelengthconversion member, in addition to the light extraction face of thesemiconductor laminate. This disposition of the wavelength conversionmember allows the wavelength of light extraction from the semiconductorlaminate to be efficiently converted.

The wavelength conversion member is mainly formed by a fluorescentmaterial. The fluorescent material contained in the wavelengthconversion member may be any material that is known in this field.Examples of the fluorescent material includes a YAG-based fluorescentmaterial and a LAG-based fluorescent material which absorb blue lightand emit yellow to green light, a SiAlON-based fluorescent material(β-sialon-based fluorescent material) which emits to green light, aSCASN-based fluorescent material and a CASN-based fluorescent materialwhich emit red light can be used singly or in combination thereof.

The wavelength conversion member may be one that contains only afluorescent material, but preferably includes alumina, silicon oxide, oranother such translucent inorganic material, a light-transmissive resin,or the like as a binder. Using a binder allows the wavelength conversionmember to be easily disposed in any position desired.

The light-transmissive resin allows penetration of light, which is 60%or greater of light emitted from the light emitting layer, and furtherpreferably allows penetration of 70% or greater, 80% or greater, or 90%or greater of light emitted from the light emitting layer. Examples ofsuch resin include a silicone resin composition, a modified siliconeresin composition, an epoxy resin composition, a modified epoxy resincomposition, an acrylic resin composition, a silicone resin, an epoxyresin, a urea resin, a fluororesin, or a hybrid resin containing one ormore of those resins.

A method for manufacturing the wavelength conversion member is a samemethod as the covering method of the fixing member (described below), amethod by forming a sheet of the wavelength conversion member andattaching it, electrophoretic deposition, potting, compression molding,electrostatic coating, and the like.

There are no particular restrictions on the thickness or shape of thewavelength conversion member, but a layer of about 10 to 300 μm is anexample.

Instead of a wavelength conversion member, a sealing member thatcontains no fluorescent material may be formed from the above-mentionedtranslucent resin.

The sealing member may contain one of the above-mentioned lightscattering materials, inorganic fillers, etc.

The wavelength conversion member, a layer contains light scatteringmaterial, and or sealing member may be laminated in two or more kinds.For instance, the sealing member may be laminated to the semiconductorlaminate and the wavelength conversion member provided over this.

Method for Manufacturing Light Emitting Device

The method for manufacturing the light emitting device of the presentembodiment includes mounting a terminal substrate on a light emittingelement including the semiconductor laminate so that at least a part ofthe outer edge of the terminal substrate is disposed more to the insidethan the outer edge of the light emitting element in plan view. In otherwords, the mounting the terminal substrate on the light emitting elementsuch that a portion of the outer edges of the terminal substrate isdisposed closer to a center of the light emitting device than the outeredge of the light emitting element when viewed in a plan view.

In one embodiment, the method for manufacturing the light emittingdevice of the present embodiment includes the steps of:

(1) Arranging a plurality of light emitting elements on a support. Forexample, this can be semiconductor laminates in which a firstsemiconductor layer, a light emitting layer and a second semiconductorlayer are laminated in that order, and which have a first electrodeconnected to the first semiconductor layer and a second electrodeconnected to the second semiconductor layer on one side.

(2) Mounting a terminal substrate on each of the semiconductor laminatesarranged on the support, so that the outer edge is disposed more to theinside than the outer edge of the semiconductor laminates when viewed ina plan view.

This method may also include one or more of the following steps:

(3) fixing a plurality of terminal substrates and a plurality ofsemiconductor laminates with the fixing member;

(4) removing the support from the semiconductor laminates; and

(5) separating (for example, cutting) the fixing members between thesemiconductor laminates at every one or more semiconductor laminates.

The above-mentioned step (3) may include, for example:

(a) covering the side faces of the terminal substrate with the fixingmember;

(b) covering the side faces of the semiconductor laminates with thefixing member; and/or

(c) covering a space between the semiconductor laminates and theterminal substrate with the fixing member.

First, in step (1), the light emitting element is formed. In otherwords, the semiconductor laminate is formed.

The semiconductor laminate can be formed on a substrate by suitablyadjusting the conditions, etc., in order to obtain the above-mentionedlayer structure of the semiconductor laminate, by any method ordinarilyused in this field. Examples of the method include MOVPE (Metal OrganicVapor Phase Epitaxy), MOCVD (Metal Organic Chemical Vapor Deposition),HYPE (Hydride Vapor Phase Epitaxy), MBE (Molecular Beam Epitaxy), andvarious other film formation methods.

For example, a buffer layer of AlGaN, a first semiconductor layer ofn-type GaN, a light emitting layer including an InGaN layer, and asecond semiconductor layer of p-type GaN are laminated by MOCVD on asapphire substrate to form the layer structure of the semiconductorlayer.

After this, part (in the thickness direction) of the secondsemiconductor layer and the light emitting layer and, if needed, thefirst semiconductor layer, of the resulting layer structure of thesemiconductor layers is removed by RIE or other such etching to exposethe first semiconductor layer. A first electrode and a second electrodethat respectively connected to the first semiconductor layer and thesecond semiconductor layer are formed on the surface of the exposedfirst semiconductor layer and the surface of the second semiconductorlayer.

The semiconductor laminate obtained in this manner is diced intoindividual pieces, each unit of which constitutes one light emittingdevice. To simplify this dicing, during or after step (1), a portion ofthe first semiconductor layer, the light emitting layer, and the secondsemiconductor layer are preferably removed at the positions where dicingis intended, thereby exposing the substrate surface (this is also calledelement separation). Damage to the semiconductor layers can be preventedby cutting at the places where the substrate surface is exposed. Thisimproves mass production. Also, since this provides a spacing betweenthe semiconductor laminates, the terminal substrate can be easilymounted even when using a terminal substrate that is as large as orlarger than the outer edge of the semiconductor laminate.

Here, if one chip is installed on one light emitting device, the cuttingis done for each unit that has undergone element separation, but if aplurality of chips are mounted on one light emitting device, the cuttingmay be done for two or more units that have undergone elementseparation.

A plurality of the resulting semiconductor laminates of each unit arearranged on a support.

There are no particular restrictions on this support, as long as it isboard shape which allows semiconductor laminates to be disposed on it.The arrangement of semiconductor laminates may be random, but a regularlayout (such as a matrix) is preferable. The arrangement is preferablysuch that the semiconductor laminates will not readily change positionwhen affixed with adhesive tape or the like.

Alternatively, after the resulting semiconductor laminates haveundergone element separation, the flow may proceed directly to the nextstep in a state in which a plurality of semiconductor laminates havebeen arranged on the substrate. If the flow moves to the next step inthis state, there will be no need to make a plurality of arrangements orcut the substrate as discussed above, and the individual units will notchange position, which is suited to mass production. The support in thiscase is a substrate used to grow the semiconductor layers.

In step (2), the terminal substrate is mounted to each of thesemiconductor laminates arranged on the support, so that the outer edgeof the terminal substrate will be arranged more to the inside than theouter edge of the semiconductor laminate in plan view.

The mounting of the terminal substrates here may be accomplished bydisposing terminal substrates over the semiconductor laminates arrangedon supports, respectively, or by aligning a plurality of terminalsubstrates on an adhesive tape or the like and transferring/disposingthem all at once on semiconductor laminates arranged on a support.

The mounting of the terminal substrate is preferably accomplished byutilizing the above-mentioned self-alignment effect. This effect allowsa terminal substrate that is either the same size as or smaller than thesemiconductor laminate constituting one unit to be mounted easily in theproper location.

In this step, if the terminal substrate has one straight side or isquadrangle in plan view, the terminal substrate may be mounted so as tocoincide with (lie in the same plane as) at least one side of thesemiconductor laminate, for example. This can be easily used for a sideview type.

In step (3), a plurality of terminal substrates and a plurality ofsemiconductor laminates are fixed with a fixing member. The fixing hereis preferably one or more of (a) a step of covering the side faces ofthe terminal substrate with the fixing member, (b) a step of coveringthe side faces of the semiconductor laminate with the fixing member, and(c) a step of covering the space between the semiconductor laminate andthe terminal substrate with the fixing member.

To fix these side faces/spaces with the fixing member (that is, to coveror embed them), any method known in this field may be used, such ascoating, potting, printing, compression molding, transfer molding, orspin coating of the fixing member. These methods can be utilized tocover, fix, or embed the side faces of the terminal substrates and theside faces of the semiconductor laminates, as well as the spaces betweenthe semiconductor laminates and the terminal substrates, all at once.One or more of the steps (a), (b), and (c) can be executed as needed bysetting the conditions of these methods.

The fixing member may be formed so as to lie in the same plane as therear face of the terminal substrate. For instance, in transfer molding,the semiconductor laminates may be facing down and disposed so as toembed the rear face of the terminal substrate on a parting sheet, afterwhich the fixing member is formed. This allows the rear face of theterminal substrate to be exposed from the fixing member.

Also, the fixing member may be provided so as to expose the insulatorlayer in addition to the terminals of the terminal substrate.

The fixing member may be formed thick enough to embed the entireterminal substrate. This increases the overall strength of the lightemitting device. As a result, this is advantageous in the supportremoval step. It is also advantageous in terms for the individual lightemitting devices after separation.

The fixing member may also be subjected to removal by dry or wetblasting, to thickness-control by grinding (using a method such assurface planarizing), or to dice, either during the process or prior tothe separation of the individual pieces. This allows the desiredterminals of the terminal substrates to be easily exposed.

For example, as shown in FIG. 8A, a fixing member 18 is compressionmolded so as to completely embed the terminal substrates having masks 61formed on their surface, and is half-diced (parts of the fixing member18 between the terminal substrates are removed) from the side near theterminal substrate. After this, as shown in FIG. 8B, the fixing member18 is removed until the terminals 15 and 16 are exposed by wet blasting,which allows the side faces of the terminal substrates to be easilyexposed, and allows a light emitting device with side face emission tobe manufactured.

After step (3), in step (4), the support is removed from thesemiconductor laminates. This removal includes both peeling theindividual semiconductor laminates from the above-mentioned adhesivetape or the like, and peeling away the substrate used to grow thesemiconductor layer.

In particular, since the semiconductor laminates are securely affixed tothe substrate used to grow the semiconductor layer, this substrate canbe easily and reliably removed by performing the fixing with the fixingmember in step (3).

The removal of the substrate in this case can be easily accomplished byshining a laser beam between the substrate and the semiconductorlaminate.

For example, if the semiconductor laminate is a GaN-based semiconductorand the support is a sapphire substrate, the substrate can be removed byirradiating a KrF excimer laser with a wavelength of 248 nm or aquarter-wavelength YAG laser with a wavelength of 266 nm, or the likefrom the surface of the support, causing the semiconductor layer thatconstitute a part of the semiconductor laminate to absorb this energy,and thereby bring about ablation. The laser beam irradiation amount,duration, and so forth can be suitably adjusted as dictated by the typeof substrate being used, the thickness, and so on.

After removal, any conductive materials, oxides, or the like remainingon the surface (such as Ga metal, Ga2O3, etc.) are removed with HCl,HNO3, or another such acid to form a clean surface. After this, thesemiconductor layer is etched with NaOH, TMAH (tetramethylammoniumhydroxide), or another such strong alkali to roughen the surface, whichimproves the light extraction efficiency.

The semiconductor laminate thus etched is more susceptible to theeffects of heat and moisture, so a protective film is preferably formedon its surface. Examples of the protective film include a single-layeror a laminated structure of a transparent insulating, that is, atransparent oxide such as SiO₂, Al₂O₃, TiO₂, Nb₂O₅, ZrO₂ or the like, atransparent nitride such as AlO_(x)N_(y), SiN, SiN_(x) or the like. Theprotective film can be formed by a spattering method, deposition, ALD(atomic layer deposition), or various film formation methods. Aparticularly dense film can be formed by ALD, so this is preferable interms of improving the reliability of the light emitting device. Thisprotective film is not limited to provide on the surface of thesemiconductor layer, and can be provided so as to cover the terminalsubstrate, the sealing member, the wavelength conversion member, andvarious other members. This affords a light emitting device with highlight extraction efficiency.

The removal of the support can also be accomplished by surfaceplanarizing, etching, blasting, or other such polishing.

In step (5), the fixing members between the semiconductor laminates, andif needed, the wavelength conversion members, are cut, etc., to obtainindividual pieces.

The cutting position here may be at every semiconductor laminate, or atevery two or more semiconductor laminates. The cutting can beaccomplished with a blade, a laser, a scriber, etc. If the support wasremoved from the semiconductor laminate in the previous step, there willbe no need to cut the support, so the cutting can be performed at ahigher yield, and better mass production will result. Also, massproduction can be improved by cutting the fixing member rather than theterminal substrate to which the semiconductor laminate is joined, aswith a conventional light emitting device.

The support, the semiconductor laminate, and the fixing member may eachbe cut by a separate means. For instance, if the support is a sapphiresubstrate, processing for cleavage with a laser may be performed fromthe surface of the support the support being broken into individualunits, and the fixing member then diced.

If a side view type of light emitting device is to be obtained, forexample, and if the portion of the terminals that will become theexternal connectors is embedded in the fixing member, it is preferablefor the external connectors of the terminals to be exposed ahead of time(prior to cutting) by wet or dry etching, blasting, etc.

The wavelength conversion member may be formed on the surface of thesemiconductor laminate and/or the surface of the fixing member prior toperforming step (5).

The wavelength conversion member is formed, for example, by a method inwhich a fluorescent material, a resin, and an organic solvent(optionally a diffusion material, etc.) are mixed, and this mixture issprayed onto the surface of the semiconductor laminate in a number ofcoats, or a method in which the mixture is applied some other way. Usinga spray method affords greater latitude in the layout, shape, etc., ofthe wavelength conversion member.

A sealing member containing no fluorescent material may be provided overthe resulting wavelength conversion member, or an optical member such asa lens or a nanolens may be provided. The sealing member, opticalmember, etc., can be formed from resin, glass, or the like.

Alternatively, a wavelength conversion member that has been previouslyformed in a flat shape, a lens shape, etc., may be disposed so as tocover all or part of the semiconductor laminate. This gives a brighterlight emitting device.

The light emitting device of the present disclosure, and a method formanufacturing the same, will now be described in detail throughreference to the drawings.

Embodiment 1 Light Emitting Device

As shown in the cross section of FIG. 1A and the bottom view of FIG. 1B,the light emitting device 10 in Embodiment 1 includes a semiconductorlaminate 14 a to be a light emitting element having a substantiallyquadrangle semiconductor laminate layer 14 having a first semiconductorlayer, a light emitting layer, and a second semiconductor layerlaminated in that order, and a first electrode 12 and a second electrode13 connected to the semiconductor laminate 14; and a terminal substrate17 a that includes a pair of terminals 15 and 16 and an insulator layer17.

The terminal substrate 17 a includes the insulator layer 17, which issubstantially quadrangle and is composed of a zinc oxide ceramic, andthe pair of terminals 15 and 16 that go from the element junction face,through different side faces, and to the rear face. This terminalsubstrate 17 a has a varistor function.

The first electrode 12 and the second electrode 13 are respectivelyelectrically connected to the first semiconductor layer, which is ann-type semiconductor layer, and the second semiconductor layer, which isa p-type semiconductor layer, part of the first electrode 12 also goesthrough an insulating film (such as SiO₂) to reach above of the secondsemiconductor layer. The faces of the first electrode 12 and the secondelectrode 13 that are joined with the terminal substrate 17 a havesubstantially the same surface area, and lie in substantially the sameplane.

The first electrode 12 and the second electrode 13 are respectivelyjoined to the junction terminals of the terminals 15 and 16 of theterminal substrate 17 a by eutectic solder (Au—Sn) so that the lightextraction face of the semiconductor laminate 14 a and the rear face ofthe terminal substrate 17 a lie in substantially parallel.

The terminal substrate 17 a is disposed so that its entire outerperiphery is more to the inside than the outer periphery of thesemiconductor laminate 14 a (see FIG. 1B in particular).

The area from the side faces of the semiconductor laminate 14 a to theside faces of the terminal substrate 17 a is covered by a fixing member18 composed of silicone resin (SMC, containing 30 wt % silicon dioxideas a filler and 30 wt % titanium dioxide as a reflective material(diffusing material)). The distance between the side faces of thesemiconductor laminate 14 a and the surface of the fixing member 18 maybe about 10 to 200 for example, 150 μm. The distance between the sidefaces of the terminal substrate 17 a and the surface of the fixingmember 18 may be about 20 to 250 for example, 200 μm. The fixing member18 is also disposed between the semiconductor laminate 14 and the fixingmember 18.

A wavelength conversion member 19 is disposed from the surface of thefirst semiconductor layer of the semiconductor laminate 14 a to thesurface of the fixing member 18. The wavelength conversion member 19 isin the form of a sheet composed of a silicone resin containing about 30wt % YAG fluorescent material. This light emitting device is such thatterminal substrates made into units are individually disposed forsemiconductor laminates that serve as individually arranged lightemitting elements, which gives a light emitting device that is properlyaligned. Also, a so-called chip-size package can be realized. Inaddition, the mounting substrate itself can be made substantiallysmaller than the size of the semiconductor laminate, which makes itpossible to obtain a more compact package.

Furthermore, with a conventional light emitting element, the substratethat was used to grow the semiconductor layer, such as a sapphiresubstrate, was used directly as the substrate for the light emittingelement. When this substrate is removed, the light absorption, internalscattering, confinement, and so forth caused by this substrate can beprevented, which raises the light extraction efficiency even more andaffords greater brightness.

When a structure having the function of a varistor, etc., is used as theterminal substrate, this function can be manifested without installingany separate functional element. As a result, a light emitting devicecan be obtained that maintains is smaller size while offering higherquality.

Embodiment 2 Method for Manufacturing Light Emitting Device

The light emitting device 10 shown in FIGS. 1A and 1B can bemanufactured by the following method.

First, as shown in FIG. 2A, the semiconductor laminate 14 (in which thefirst semiconductor layer, the light emitting layer, and the secondsemiconductor layer are laminated) is formed on a sapphire substrate 11.The semiconductor laminate 14 have part of the second semiconductorlayer and the light emitting element removed to expose part of the firstsemiconductor layer. Also, the semiconductor laminate 14 are separatedby a separation groove 62 that exposes the surface of the sapphiresubstrate 11, in units that function as the light emitting element ofone chip.

With the semiconductor laminate 14, the first electrode 12 and thesecond electrode 13 are formed on the exposed first semiconductor layerand on the second semiconductor layer. Electrodes can be formed byutilizing a known method. This forms the semiconductor laminates 14 a tobe a light emitting element.

As shown in FIG. 2B (the top view) and FIG. 2C (the cross-section), theterminal substrates 17 a are mounted on the individual semiconductorlaminates 14 a so that the first electrode 12 and the second electrode13 of the semiconductor laminate 14 a arranged on the sapphire substrate11 will be joined with the junction terminals of the terminals 15 and16. The outer edge of the terminal substrate 17 a here is disposed moreto the inside than the outer edge of the semiconductor laminate 14 a(see FIG. 2B in particular).

As shown in FIG. 2D, the fixing member 18 coating is applied so as tocover the entire terminal substrates 17 a and the side faces of thesemiconductor laminates 14 a, from the terminal substrates 17 a side.The fixing member 18 is also applied between the semiconductor laminates14 a and the terminal substrates 17 a.

Alternatively, the semiconductor laminates 14 a with sapphire substrate11 which joined to the terminal substrates 17 a are sandwiched betweenupper and lower molds, then resin is injected into the molds, and thefixing member 18 is disposed between the terminal substrates 17 a andthe semiconductor laminates 14 a, at the side faces of the semiconductorlaminates 14 a, and over the entire terminal substrates 17 a.

As shown in FIG. 2E, the fixing member 18 is removed from the rear faceof the terminal substrates 17 a so as to expose the external connectorsof the terminals 15 and 16. After this, a KrF excimer laser having awavelength of 248 nm is irradiated from the surface of the sapphiresubstrate 11, the energy is absorbed by the semiconductor layerconstituting the semiconductor laminates 14 a, and ablation isperformed, which removes the sapphire substrate 11 and exposes thesurface of the first semiconductor layer. This separates thesemiconductor laminates 14 a for each chip within the fixing member 18.

Gallium metal, Ga₂O₃, or other such residue that remains on the surfaceafter removal of the sapphire substrate 11 is removed with HCl to form aclean surface. The semiconductor layer is then roughened by etching withNaOH.

As shown in FIG. 2F, the wavelength conversion member 19 covers thesurface of the exposed first semiconductor layer. The wavelengthconversion member 19 here also covers the surface of the fixing member18 disposed to the side of the first semiconductor layer.

After this, the wavelength conversion member 19 and the fixing member 18are cut along the X line in FIG. 2F for each of the semiconductorlaminates 14 a. This gives the light emitting device 10 shown in FIGS.1A and 1B.

Since terminal substrates that have been made into units alreadyprovided with terminals can thus be disposed on the individualsemiconductor laminates, the yield is better than when the terminals areformed by plating growth or the like, and since alignment is easier thanwhen mounting a substrate group, mass production can be improved.

Also, when the individual semiconductor laminates are covered by fixingmembers, the stress produced in removing the substrate used to growththe semiconductor layer can be reduced according to the size of thesemiconductor laminates. Thus, the substrate can be easily removedwithout damaging the semiconductor laminates. This results in a higheryield.

When the semiconductor laminates are cut after the substrate has thusbeen removed, they can be made into units without cutting the substrate,so this contributes to even better mass production.

Embodiment 3 Light Emitting Device

As shown in the bottom view of FIG. 3, the light emitting device 20 inEmbodiment 3 includes two semiconductor laminates 14 a having asubstantially quadrangle semiconductor layer having a firstsemiconductor layer, a light emitting layer, and a second semiconductorlayer laminated in that order, and a first electrode 12 and a secondelectrode 13 connected to the semiconductor layer 14; and a terminalsubstrate 27 a.

The terminal substrate 27 a includes an insulator layer 27, a pair ofterminals 25 and 26 that go from the element junction face, throughdifferent side faces, and to the rear face, and a wiring-use terminal 21that is separated from the terminals 25 and 26 and located between themat the element junction face.

The first electrode of the one semiconductor laminate 14 a is seriallyconnected to the terminal 25 of the terminal substrate 27 a, the secondelectrode of the other semiconductor laminate 14 a to the terminal 26 ofthe terminal substrate 27 a, and the second electrode of the onesemiconductor laminate 14 a and the first electrode of the othersemiconductor laminate 14 a to the wiring-use terminal 21.

The terminal substrate 27 a is disposed more to the inside than theouter periphery on three sides of the each semiconductor laminate 14 a,and is disposed straddling one side opposite each semiconductorlaminates 14 a in plan view.

Thus, except for the fact that a fixing member 28 and a wavelengthconversion member are cut for every two semiconductor laminates 14 a,the configuration is substantially the same as in the light emittingdevice 10 in Embodiment 1, and can be manufactured by the same method asin Embodiment 2.

This light emitting device has the same effect as the light emittingdevice 10 in Embodiment 1 and the manufacturing method in Embodiment 2.

Embodiment 4 Light Emitting Device

As shown in the cross section (along the N-N′ line in FIG. 4B) of FIG.4A and the bottom view of FIG. 4B, the light emitting device 30 inEmbodiment 4 includes a semiconductor laminate 34 a having asubstantially quadrangle semiconductor layer including a firstsemiconductor layer, a light emitting layer, and a second semiconductorlayer laminated in that order, and a first electrode and a secondelectrode connected to the semiconductor layer; and a terminal substrate37 a that includes a pair of terminals 35 and 36 and an insulator layer37.

The first electrode and second electrode are electrically connected tothe terminals 35 and 36 via a junction member 60.

This light emitting device 30 includes a wavelength conversion member 39on the side of the semiconductor laminate 34 a where the electrodes arenot provided, that is, on the light extraction face side, and thesemiconductor laminate 34 a and the wavelength conversion member 39 aresubstantially the same in size and shape. A fixing member 38 covers onlythe first electrode and second electrode portions of the semiconductorlaminate 34 a, and does not cover the side faces of the semiconductorlayer.

One terminal 36 of the terminal substrate is provided in a rectangularshape having a cutout in the approximate center of the side opposite theother terminal 35, as an external connector on the rear face of theterminal substrate. The other terminal 35 is provided in a rectangularshape having no cutout, and is shaped differently from the one terminal35. Thus using different shapes for the external connectors of the pairof terminals makes it easy to determine the polarity of the lightemitting device.

Otherwise, the configuration is substantially the same as that of thelight emitting device 10 in Embodiment 1, and can be manufactured by thesame method as in Embodiment 2.

This light emitting device has the same effect as the light emittingdevice 10 in Embodiment 1 and the manufacturing method in Embodiment 2.

Embodiment 5 Light Emitting Device

As shown in the cross section (along the M-M′ line in FIG. 5B) of FIG.5A and the bottom view of FIG. 5B, the light emitting device 40 inEmbodiment 5 includes a semiconductor laminate 44 a having asubstantially quadrangle semiconductor layer including a firstsemiconductor layer, a light emitting layer, and a second semiconductorlayer laminated in that order, and a first electrode and a secondelectrode connected to the semiconductor layer; and a terminal substrate37 a that includes a pair of terminals 45 and 46 and an insulator layer47.

The first electrode and second electrode are electrically connected tothe terminals 45 and 46 via a junction member 60.

This light emitting device 40 includes a wavelength conversion member 49on the light extraction face of a semiconductor laminate 44 a. Thesemiconductor laminate 44 a is smaller than the wavelength conversionmember 49.

A fixing member 48 covers the first electrode and second electrodeportions of the semiconductor laminate 44 a, as well as part of the sidefaces of the semiconductor layer.

Terminals 45 and 46 on the terminal substrate go from the elementjunction face of the terminal substrate, through a side face, to therear face of the terminal substrate. The terminals 45 and 46 are exposedfrom the fixing member 48 on one side face of the terminal substrate. Atthis side face, the wavelength conversion member 49, the semiconductorlaminate 47 a, and the fixing member 48 coincide with and lie insubstantially the same plane as the exposed faces of the terminals 45and 46.

Also, on the rear face of the terminal substrate, the surface of aninsulator layer 47 is covered by the fixing member 48.

The other configurations are substantially the same as in the lightemitting devices 10 and 30 in Embodiments 1 and 4, and can bemanufactured by the same method as in Embodiment 2.

This light emitting device has the same effect as the light emittingdevices 10 and 30 in Embodiments 1 and 4, and as the manufacturingmethod in Embodiment 2.

Since the terminals of the terminal substrate 47 a are exposed at theside face of the light emitting device as well, this embodiment can beused as a side view type of light emitting device.

Embodiment 6 Light Emitting Device

As shown in FIGS. 6A to 6E, the light emitting device 50 in Embodiment 6includes a semiconductor laminate 54 a having a substantiallyrectangular-shape semiconductor layer including a first semiconductorlayer, a light emitting layer, and a second semiconductor layerlaminated in that order, and a first electrode and a second electrodeconnected to the semiconductor layer; and a terminal substrate 57 a thatincludes a pair of terminals 55 and 56 and an insulator layer 57.

This light emitting device 50 includes a wavelength conversion member 59on the light extraction face of a semiconductor laminate 54 a. Thesemiconductor laminate 54 a is smaller than the wavelength conversionmember 59.

A fixing member 58 covers entire side faces of semiconductor laminate 54a, and a wavelength conversion member 59 covers the upper faces of boththe semiconductor laminate 54 a and the fixing member 58. Consequently,the entire side faces of the semiconductor laminate 54 a can bereinforced by the fixing member 58, and higher strength can be ensuredfor the light emitting device. Also, the fixing member 58 is sloped atthe face touching the terminals exposed on the side face of the terminalsubstrate. This allows the mounting solder used for joining to terminalparts 56 aa to effectively accumulate at this sloped portion.

As shown in FIGS. 6C and 6E, an insulator layer 57 of the terminalsubstrate has a convex shape on the side close to semiconductor laminate54 a, as seen from the side face. Consequently, the portion insulatorlayer 57 of the terminal substrate that is close to the semiconductorlaminate is narrower than on the opposite side, which reduces the amountof fixing member that is removed in the blasting, etc., performed beforeand after the step in FIG. 2F, so the processing can be simpler. Also, asnugger fit is achieved by embedding the convex part in the fixingmember 58.

The terminals 55 and 56 go from the element junction face side of theterminal substrate, through a pair of side faces, to the rear face. Theyare exposed from the fixing member 58 near the rear face side of thepair of side faces and the rear face of the terminal substrate. That is,the terminals 55 and 56 are covered by the fixing member 58 at theportion close to the semiconductor laminate 54 a on the pair of sidefaces, and not covered at the portion close to the rear face side on thepair of side faces. This allows both of the terminals 55 and 56 exposedat the side faces and the rear face side of the terminal substrate to beused as external connectors.

Also, the wavelength conversion member 59 and the fixing member 58 liein substantially the same plane on another pair of side faces differentfrom the pair of side faces where the terminals 55 and 56 of theterminal substrate are exposed (see FIGS. 6C and 6E). This other pair ofside faces form the top and bottom faces of the light emitting device,allowing the light emitting device to be used as a side view type. Inthis case, using both of the terminals 55 and 56 exposed at the sidefaces and the rear face side of the terminal substrate as externalconnectors increases the mounting strength of the light emitting device.

With the light emitting device in this embodiment, the reliability ofthe light emitting device is enhanced by covering the entire side facesof the semiconductor laminate 54 a with the fixing member 58. Inparticular, when the light emitting device is used as a side view typein which the semiconductor laminate 54 a is mounted close to themounting substrate of the light emitting device, it is possible toprevent the infiltration of flux and the like used in the mounting ofthe light emitting device.

This light emitting device has the same effect as the light emittingdevices 10 and 30 in Embodiments 1 and 4.

As shown in FIG. 2F, with this light emitting device, the terminals ofthe terminal substrate 57 a can be exposed by blasting away or otherwiseremoving the fixing member covering the pair of side faces where thepair of terminals is provided, either before or after the cutting of thewavelength conversion member and the fixing member. The otherconfigurations can be manufactured by the same method as in Embodiment2.

This light emitting device has the same effect as the light emittingdevices 10 and 30 in Embodiments 1 and 4, and the manufacturing methodin Embodiment 2.

Embodiment 7 Light Emitting Device

As shown in FIG. 7, the light emitting device 60 in Embodiment 7 is suchthat terminals 55 a and 56 a are exposed on the rear face side of theterminal substrate, and on two pairs of side faces that are connected tothe rear face. That is, when the light emitting device is mounted as aside view type, the terminals 55 a and 56 a expose a face Q that servesas the bottom face of the light emitting device, a face S that isadjacent to this bottom face, a face P on the opposite side from theface opposite the semiconductor laminate, and a top face T on theopposite side from the mounting face of the light emitting device.

Otherwise, the configuration and effect are substantially the same asthose of the light emitting device 50 in Embodiment 6.

Embodiment 8 Light Emitting Device

As shown in FIG. 9, the light emitting device 70 in Embodiment 8 is suchthat a semiconductor laminate 74 has a substrate 75 used to grow thesemiconductor layers, the substrate 75 is exposed at part of its surfacefrom the semiconductor laminate 74.

Otherwise, the configuration and effect are substantially the same asthose of the light emitting device 10 in Embodiment 1.

INDUSTRIAL APPLICABILITY

The light emitting device according to the present invention can be usedfor various kinds of light sources, such as illumination light sources,light sources for various kinds of indicators, light sources forautomobile use, light sources for displays, back light sources forliquid crystal displays, light sources for sensors, signals, automobileuse, channel control characters for channel boards.

As illustrated above, embodiments are described to give a concrete formto technical ideas of a light emitting device according to the presentinvention, the present invention is not limited to the describedembodiments of the present invention. Also, obviously, numerousmodifications and variations of the present invention are possible inlight of the above teachings, which are within the scope and spirit ofthe invention, and such other modifications and variations are intendedto be covered by the following claims.

The invention claimed is:
 1. A method of manufacturing a light emittingdevice comprising: mounting a terminal substrate on a light emittingelement individually arranged on a support from above the light emittingelement with respect to a direction of gravity, with the light emittingelement including a semiconductor laminate, which includes a firstsemiconductor layer, a light emitting layer and a second semiconductorlayer laminated in that order on the support, so that at least a part ofthe outer edge of the terminal substrate is disposed more to the insidethan the outer edge of the first semiconductor layer of the lightemitting element in plan view.
 2. The method of manufacturing a lightemitting device according to claim 1, further comprising: prior to themounting of the terminal substrate, individually arranging on thesupport a plurality of the light emitting elements such that thesemiconductor laminates of adjacent ones of the light emitting elementsare separated from each other; and the mounting of the terminalsubstrate includes individually mounting a plurality of the terminalsubstrates respectively on the light emitting elements individuallyarranged on the support so that the outer edge of each of the terminalsubstrates is disposed more to the inside than the outer edge of thefirst semiconductor layer of a corresponding one of the light emittingelements in plan view.
 3. The method of manufacturing a light emittingdevice according to claim 2, wherein: the support is a substrate used togrow the semiconductor laminate.
 4. The method of manufacturing a lightemitting device according to claim 1, further comprising: covering theside faces of the terminal substrate with a fixing member.
 5. The methodof manufacturing a light emitting device according to claim 1, furthercomprising: covering a space between the light emitting element and theterminal substrate with a fixing member.
 6. The method of manufacturinga light emitting device according to claim 1, further comprising:forming a wavelength conversion member on the semiconductor laminate anda fixing member.
 7. The method of manufacturing a light emitting deviceaccording to claim 1, wherein the mounting of the terminal substrate onthe light emitting element includes mounting the terminal substrate onthe light emitting element, which further includes a first electrodeincluding a protrusion portion and a second electrode including aprotrusion portion.
 8. The method of manufacturing a light emittingdevice according to claim 7, wherein the mounting of the terminalsubstrate on the light emitting element includes mounting the terminalsubstrate including a pair of terminals each having a protrusion portionso that the terminals of the terminal substrate are respectivelyconnected to the protrusion portion of the first electrode and theprotrusion portion of the second electrode.
 9. The method ofmanufacturing a light emitting device according to claim 8, wherein theprotrusion portion of each of the terminals is formed by disposing abump on a flat surface of the terminal, disposing an insulator having adifferent thickness under the terminal, disposing the terminal having adifferent thickness on a flat insulator, or by combination thereof. 10.The method of manufacturing a light emitting device according to claim7, wherein each of the protrusion portion of the first electrode and theprotrusion portion of the second electrode protrudes from an uppersurface of a corresponding one of the first electrode and the secondelectrode in which the protrusion portion is not disposed by a heightequal to or less than 100 micro meters.
 11. The method of manufacturinga light emitting device according to claim 8, wherein the protrusionportion of each of the terminals protrudes from an upper surface of theterminal in which the protrusion portion is not disposed by a heightequal to or less than 100 micro meters.
 12. The method of manufacturinga light emitting device according to claim 3, further comprising:covering the side faces of the terminal substrate with a fixing member.13. The method of manufacturing a light emitting device according toclaim 12, further comprising: covering a space between the lightemitting element and the terminal substrate with a fixing member. 14.The method of manufacturing a light emitting device according to claim3, further comprising: fixing the plurality of the terminal substratesand the plurality of the light emitting elements with a fixing member;removing the support from the light emitting elements; and separatingthe fixing member between the semiconductor laminates at every one ormore light emitting elements.
 15. The method of manufacturing a lightemitting device according to claim 3, further comprising: forming awavelength conversion member on the semiconductor laminate and a fixingmember.
 16. The method of manufacturing a light emitting deviceaccording to claim 12 further comprising: separating the fixing memberbetween the semiconductor laminates at every one or more light emittingelements, and the separating of the fixing member is performed bycutting the fixing member.
 17. The method of manufacturing a lightemitting device according to claim 3, wherein the mounting of theterminal substrate on the light emitting element includes mounting theterminal substrate on the light emitting element, which further includesa first electrode including a protrusion portion and a second electrodeincluding a protrusion portion.
 18. A method of manufacturing a lightemitting device comprising: individually arranging on a support aplurality of light emitting elements each including a semiconductorlaminate such that the semiconductor laminates of adjacent ones of thelight emitting elements are separated from each other, each of thesemiconductor laminates including a first semiconductor layer, a lightemitting layer and a second semiconductor layer laminated in that orderon the support; individually mounting a plurality of terminal substratesrespectively on the light emitting elements individually arranged on thesupport so that an outer edge of each of the terminal substrates isdisposed more to the inside than an outer edge of the firstsemiconductor layer of a corresponding one of the light emittingelements in plan view; fixing the plurality of the terminal substratesand the plurality of the light emitting elements with a fixing member sothat the fixing member fills between adjacent ones of the semiconductorlaminates and between adjacent ones of the terminal substrates; removingthe support from the light emitting elements; and separating the fixingmember between the semiconductor laminates and between the terminalsubstrates at every one or more light emitting elements.
 19. The methodof manufacturing a light emitting device according to claim 18, furthercomprising: the separating of the fixing member is performed by cuttingthe fixing member.